a ms - 5fs high voltage rectifier dimensional diagram millimeters otes 20 min. dia p 15.0 p dia ? resistant to corrosion ? encapsulated by a hermetically sealed epoxy resin package ? avalanche breakdown protection ? lightweight and durable ? electrostatic precipitator ? high voltage generators ? high voltage testing symbol value unit conditions repetitive peak rev. volt v rrm 5 kv maximum junction temp. tjmax +125 c storage temperature tstg - 40 to +125 c average forward current i o 25 ma forward surge current i fsm 3.0 a symbol value unit conditions normal temperature reverse current i r1 2.0 max a v(r)=v(rrm) high temperature reverse current i r2 50 max a v(r)=v(rrm), tamb=100c reverse breakdown voltage v f 16.0 v i(f)=150ma reverse recovery time trr 75 ns i(f)=50ma, i(r)=100ma features applications absolute maximum ratings electrical characteristics ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 1 revised 06/2013
|
